- Source: Gallium antimonide
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. It has a room temperature direct bandgap of approximately 0.73 eV.
History
The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide. The Ga-Sb phase equilibria was investigated in 1955 by Koster and by Greenfield.
Applications
GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
See also
Aluminium antimonide
Indium antimonide
Gallium arsenide
References
External links
properties listed at NSM, Ioffe Institute.
National Compound Semiconductor Roadmap at the Office of Naval Research
Kata Kunci Pencarian:
- Fabrikasi wafer (elektronik)
- Kamus rumus kimia
- Gallium antimonide
- Gallium arsenide antimonide
- Aluminium gallium antimonide
- Gallium indium antimonide
- Thermophotovoltaic energy conversion
- Gallium arsenide
- Gallium nitride
- Gallium
- Zinc antimonide
- Aluminium antimonide
