• Source: Indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers, photodetectors and thermophotovoltaic cells.
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.




See also


Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide




References

Kata Kunci Pencarian:

• Kamus rumus kimia
• Fabrikasi wafer (elektronik)
• Indium phosphide
• Indium arsenide antimonide phosphide
• Indium arsenide
• Indium antimonide
• Gallium indium arsenide antimonide phosphide
• Indium gallium arsenide phosphide
• Gallium arsenide phosphide
• Gallium arsenide antimonide
• Gallium arsenide
• List of semiconductor materials