• Source: Indium gallium aluminium nitride

Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.




See also


Indium aluminium nitride




References

Kata Kunci Pencarian:

• Semikonduktor
• Dioda pemancar cahaya
• Boron
• Logam alkali
• Kamus rumus kimia
• Selenium
• Itrium
• Fabrikasi wafer (elektronik)
• Tantalum
• Indium gallium aluminium nitride
• Indium nitride
• Indium gallium nitride
• Aluminium gallium indium phosphide
• Gallium nitride
• Indium aluminium nitride
• Aluminium nitride
• Gallium
• Indium
• Nitride