- Source: International Conference on Defects in Semiconductors
International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in
Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings.
The most recent ICDS (the 32nd) was at Rehoboth Beach, Delaware, September 10-15th, 2023. ICDS 32 included the inaugural award of the Haller Prize, named after Eugene E. Haller who was a major figure in the semiconductor community and an inspiring mentor for students.
The next ICDS (33) will be at the Fudan University, September 15-19th, 2025, and will include a tutorial day on the 14th.
Corbett Prize
The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers. The prize has been awarded at every ICDS since 1995.
= Recipients
=Haller Prize
Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students. The Haller Prize is given to the best graduate student(s) presentation at each ICDS since 2023.
= Recipients
=Conference locations
The ICDS venue often rotates between locations in Europe, North America and the far East.
Related Conferences
The Gordon Research Conferences host a regular semiconductor defect meeting in alternating years to the ICDS.
The Extended Defects in Semiconductors conference (EDS) is in alternating years to the ICDS.
See also
Semiconductors
Doping (semiconductor)
Crystallographic defect
References
Kata Kunci Pencarian:
- MOSFET
- Metaloid
- International Conference on Defects in Semiconductors
- List of physics conferences
- ICDS
- Fairchild Semiconductor
- Europium(III) nitride
- Semiconductor device fabrication
- Materials science
- Carrier lifetime
- Silicon–germanium
- Light-emitting diode
