• Source: Zinc nitride

Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.




Chemical properties


Zinc nitride can be obtained by thermally decomposing zincamide (zinc diamine) in an anaerobic environment, at temperatures in excess of 200 °C. The by-product of the reaction is ammonia.

3 Zn(NH2)2 → Zn3N2 + 4 NH3
It can also be formed by heating zinc to 600 °C in a current of ammonia; the by-product is hydrogen gas.

3 Zn + 2 NH3 → Zn3N2 + 3 H2 The decomposition of Zinc Nitride into the elements at the same temperature is a competing reaction. At 700 °C Zinc Nitride decomposes. It has also been made by producing an electric discharge between zinc electrodes in a nitrogen atmosphere. Thin films have been produced by chemical vapour deposition of Bis(bis(trimethylsilyl)amido]zinc with ammonia gas onto silica or ZnO coated alumina at 275 to 410 °C.
The crystal structure is anti-isomorphous with Manganese(III) oxide. (bixbyite). The heat of formation is c. 24 kilocalories (100 kJ) per mol. It is a semiconductor with a reported bandgap of c. 3.2eV, however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li3N with a zinc electrode showed a band-gap of 1.01 eV.
Zinc nitride reacts violently with water to form ammonia and zinc oxide.

Zn3N2 + 3 H2O → 3 ZnO + 2 NH3
Zinc nitride reacts with lithium (produced in an electrochemical cell) by insertion. The initial reaction is the irreversible conversion into LiZn in a matrix of beta-Li3N. These products then can be converted reversibly and electrochemically into LiZnN and metallic Zn.




See also


Nitride
Zinc nitrate




References






Further reading


Futsuhara, M.; Yoshioka, K.; Takai, O. (1998). "Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering". Thin Solid Films. 322 (1): 274–281. Bibcode:1998TSF...322..274F. doi:10.1016/S0040-6090(97)00910-3.
Lyutaya, M. D.; Bakuta, S. A. (1980). "Synthesis of the nitrides of Group II elements". Powder Metallurgy and Metal Ceramics. 19 (2): 118–122. doi:10.1007/BF00792038. S2CID 93036462.
Wu, P.; Tiedje, T. (2016). "Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films". Semiconductor Science and Technology. 31 (10): 1–4. Bibcode:2016SeScT..31jLT01W. doi:10.1088/0268-1242/31/10/10LT01. S2CID 99713171.




External links


Material Safety Data Sheet from GFS Chemicals

Kata Kunci Pencarian:

• Dioda pemancar cahaya
• Logam alkali
• Boron
• Semikonduktor
• Kamus rumus kimia
• Bilangan oksidasi
• Fabrikasi wafer (elektronik)
• Zinc nitride
• Nitride
• Calcium nitride
• Gallium nitride
• Cadmium nitride
• Zinc oxide
• Silver nitride
• Gallium nitride nanotube
• Light-emitting diode
• Cubic crystal system